RESUMO
Charge doping to Mott insulators is critical to realize high-temperature superconductivity, quantum spin liquid state, and Majorana fermion, which would contribute to quantum computation. Mott insulators also have a great potential for optoelectronic applications; however, they showed insufficient photoresponse in previous reports. To enhance the photoresponse of Mott insulators, charge doping is a promising strategy since it leads to effective modification of electronic structure near the Fermi level. Intercalation, which is the ion insertion into the van der Waals gap of layered materials, is an effective charge-doping method without defect generation. Herein, we showed significant enhancement of optoelectronic properties of a layered Mott insulator, α-RuCl3, through electron doping by organic cation intercalation. The electron-doping results in substantial electronic structure change, leading to the bandgap shrinkage from 1.2 eV to 0.7 eV. Due to localized excessive electrons in RuCl3, distinct density of states is generated in the valence band, leading to the optical absorption change rather than metallic transition even in substantial doping concentration. The stable near-infrared photodetector using electronic modulated RuCl3 showed 50 times higher photoresponsivity and 3 times faster response time compared to those of pristine RuCl3, which contributes to overcoming the disadvantage of a Mott insulator as a promising optoelectronic device and expanding the material libraries.
RESUMO
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
RESUMO
Poly(9,9-dioctylfluorene) (PFO) has attracted significant interests owing to its versatility in electronic devices. However, changes in its optical properties caused by its various phases and the formation of oxidation defects limit the application of PFO in light-emitting diodes (LEDs). We investigated the effects of the addition of Triton X-100 (hereinafter shortened as TX) in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to induce interlayer diffusion between PEDOT:PSS and PFO to enhance the stability of the PFO phase and suppress its oxidation. Photoluminescence (PL) measurement on PFO/TX-mixed PEDOT:PSS layers revealed that, upon increasing the concentration of TX in the PEDOT:PSS layer, the ß phase of PFO could be suppressed in favor of the glassy phase and the wide PL emission centered at 535 nm caused by ketone defects formed by oxidation was decreased considerably. LEDs were then fabricated using PFO as an emission layer, TX-mixed PEDOT:PSS as hole-transport layer, and zinc oxide (ZnO) nanorods as electron-transport layer. As the TX concentration reached 3 wt %, the devices exhibited dramatic increases in current densities, which were attributed to the enhanced hole injection due to TX addition, along with a shift in the dominant emission wavelength from a green electroluminescence (EL) emission centered at 518 nm to a blue EL emission centered at 448 nm. The addition of TX in PEDOT:PSS induced a better hole injection in the PFO layer, and through interlayer diffusion, stabilized the glassy phase of PFO and limited the formation of oxidation defects.
RESUMO
The morphology of perovskite films has a significant impact on luminous characteristics of perovskite light-emitting diodes (PeLEDs). To obtain a highly uniform methylammonium lead tribromide (MAPbBr3) film, a gas-assisted crystallization method is introduced with a mixed solution of MAPbBr3 precursor and polymer matrix. The ultrafast evaporation of the solvent causes a high degree of supersaturation which expedites the generation of a large number of nuclei to form a MAPbBr3-polymer composite film with full surface coverage and nano-sized grains. The addition of the polymer matrix significantly affects the optical properties and morphology of MAPbBr3 films. The PeLED made of the MAPbBr3-polymer composite film exhibits an outstanding device performance of a maximum luminance of 6800 cd·m-2 and a maximum current efficiency of 1.12 cd·A-1. Furthermore, 1 cm2 area pixel of PeLED displays full coverage of a strong green electroluminescence, implying that the high-quality perovskite film can be useful for large-area applications in perovskite-based optoelectronic devices.
RESUMO
In this study, plasmonic silver (Ag) nanoparticle-(NP) anchored ZnO nanorods (NRs) and nanotube-(NT) based UV photodetectors are demonstrated. Here, Ag NPs are synthesized and anchored by using a room-temperature photochemical method by exposing the precursor solution in UV radiation. In order to achieve a stronger surface plasmon resonance (SPR) and minimum agglomeration, the photochemical method is optimized with a precursor concentration of 5 mmol, a UV intensity of 0.4 mW · cm-2, and an exposure time of 30 min. An asymmetry around 380 nm in the absorption spectra of the NP solution indicates the presence of plasmonic resonance in that region. Upon anchoring the Ag NPs, ZnO NRs show enhanced band edge emission (380-400 nm) and the emission is further significantly increased in Ag NP-anchored ZnO NTs. The on/off ratio and photoresponse properties of the UV photodetectors are enhanced significantly after anchoring Ag NPs on the ZnO nanostructures. It is believed that the near-field coupling of SPR causes an optical enhancement of ZnO, whereas the bridging effect and hot-electron transfer to the conduction band of ZnO by plasmonic Ag NPs, anchored in close proximity, gives rise to a faster response of the photodetectors.
